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NP52N06SLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
60
55
50
I D = 26 A
Pulsed
10000
C iss
45
40
35
1000
30
25
20
15
10
V GS = 4.5 V
V GS = 10 V
100
V GS = 0 V
C rss
C oss
5
0
10
f = 1 MHz
-80 -40 0
40
80
120
160
200
0.1
1
10
100
T ch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
V DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
10
t r
t d(on)
t f
t d(off)
60
50
40
30
20
V DD = 48 V / I D = 52 A
V DD = 30 V / I D = 52 A
V DD = 12 V / I D = 45 A
V GS
12
10
8
6
4
V DD = 30 V
V GS = 10 V
10
V DS
2
R G = 0 Ω
1
0
0
0.1
1
10
100
0
5
10
15
20
25
30
35
40
I D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
Q G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
V GS = 10 V
1000
10
1
V GS = 4.5 V
V GS = 0 V
100
10
0.1
0.01
0
0.5
1
Pulsed
1.5
1
0.1
1
di/dt = 100 A/ μ s
V GS = 0 V
10
100
V F(S-D) - Source to Drain Voltage - V
Data Sheet D18202EJ2V0DS
I F - Diode Forward Current - A
5
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